IHW30N120R2 Datasheet PDF - Infineon
| Part Number | IHW30N120R2 | |
| Description | Reverse Conducting IGBT | |
| Manufacturers | Infineon | |
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IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
C
G
E
PG-TO-247-3
Type
IHW30N120R2
VCE
1200V
IC
30A
VCE(sat),Tj=25°C
1.65V
Tj,max
175°C
Marking
H30R1202
Package
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Value
1200
60
30
90
90
60
30
90
50
130
120
±20
±25
390
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.5 Dec. 09
Free Datasheet http://www.0PDF.com
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IHW30N120R2
Soft Switching Series
80A
70A
VGE=20V
60A 15V
50A 13V
11V
40A 9V
30A 7V
20A
10A
0A
0.0V 0.5V 1.0V 1.5V 2.0V 2.5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
80A
70A VGE=20V
60A 15V
13V
50A 11V
40A 9V
7V
30A
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
70A
60A
50A
40A
30A
20A TJ=175°C
25°C
10A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=60A
2.0V
1.5V
1.0V
IC=30A
IC=15A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter saturation
voltage as a function of junction
temperature
(VGE =15V)
Power Semiconductors
5
Rev. 1.5 Dec. 09
Free Datasheet http://www.0PDF.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IHW30N120R2 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IHW30N120R2.PDF Datasheet ] | |
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