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PDF FQPF9N25C Data sheet ( Hoja de datos )
| Número de pieza | FQPF9N25C | |
| Descripción | N-Channel QFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQPF9N25C / FQPF9N25CT
N-Channel QFET® MOSFET
250 V, 8.8 A, 430 mΩ
Features
• 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V,
ID = 4.4 A
• Low Gate Charge (Typ. 26.5 nC)
• Low Crss (Typ. 45.5 pF)
• 100% Avalanche Tested
November 2013
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
GDS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
FQPF9N25C / FQPF9N25CT
250
8.8 *
5.6 *
35.2 *
± 30
285
8.8
7.4
5.5
38
0.3
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FQPF9N25C / FQPF9N25CT
3.29
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.0PDF.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.0PDF.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQPF9N25C.PDF ] | |
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