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F60N06P fiches techniques PDF

KEC - KF60N06P

Numéro de référence F60N06P
Description KF60N06P
Fabricant KEC 
Logo KEC 





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F60N06P fiche technique
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology,
DC/DC Converters and switching mode power supplies.
FEATURES
VDSS = 60V, ID = 60A
Drain-Source ON Resistance :
RDS(ON) =13.2m (Max.) @VGS = 10V
Qg(typ.) = 48nC
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60 V
20 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID*
IDP
EAS
EAR
dv/dt
60
37 A
230
430 mJ
13.5 mJ
4.5 V/ns
Drain Power
Dissipation
Tc=25
Derate above 25
PD
113 W
0.90 W/
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
RthJC
RthJA
1.1
62.5
/W
/W
* : Drain current limited by maximum junction temperature.
KF60N06P
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
PIN CONNECTION
D
G
2009. 12.21
S
Revision No : 0
1/6
Free Datasheet http://www.0PDF.com

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