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Renesas - MOS FIELD EFFECT TRANSISTOR

Numéro de référence K4146
Description MOS FIELD EFFECT TRANSISTOR
Fabricant Renesas 
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K4146 fiche technique
2SK4146
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0130EJ0100
Rev.1.00
Sep 24, 2010
Description
The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
Low input capacitance
Ciss = 3500 pF TYP. (VDS = 10 V)
Ordering Information
Part No.
2SK4146-S19-AY 1
LEAD PLATING
Pure Sn (Tin)
PACKING
50 pcs/tube
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-220, S19 tube
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V) VDSS
75
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
ID(DC)
ID(pulse)
±80
±200
Total Power Dissipation (TC = 25°C) PT1
84
Total Power Dissipation (TA = 25°C) PT2
1.5
Channel Temperature
Tch
150
Storage Temperature
Repetitive Avalanche Current 2
Repetitive Avalanche Energy 2
Tstg
IAR
EAR
55 to +150
33
109
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
R07DS0130EJ0100 Rev.1.00
Sep 24, 2010
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