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Numéro de référence | K4146 | ||
Description | MOS FIELD EFFECT TRANSISTOR | ||
Fabricant | Renesas | ||
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1 Page
2SK4146
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0130EJ0100
Rev.1.00
Sep 24, 2010
Description
The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low input capacitance
⎯ Ciss = 3500 pF TYP. (VDS = 10 V)
Ordering Information
Part No.
2SK4146-S19-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
50 pcs/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-220, S19 tube
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V) VDSS
75
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
ID(DC)
ID(pulse)
±80
±200
Total Power Dissipation (TC = 25°C) PT1
84
Total Power Dissipation (TA = 25°C) PT2
1.5
Channel Temperature
Tch
150
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Tstg
IAR
EAR
−55 to +150
33
109
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
R07DS0130EJ0100 Rev.1.00
Sep 24, 2010
Page 1 of 6
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Pages | Pages 8 | ||
Télécharger | [ K4146 ] |
No | Description détaillée | Fabricant |
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