|
|
PDF 2SK4146 Data sheet ( Hoja de datos )
| Número de pieza | 2SK4146 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK4146 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
2SK4146
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0130EJ0100
Rev.1.00
Sep 24, 2010
Description
The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low input capacitance
⎯ Ciss = 3500 pF TYP. (VDS = 10 V)
Ordering Information
Part No.
2SK4146-S19-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
50 pcs/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-220, S19 tube
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V) VDSS
75
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
ID(DC)
ID(pulse)
±80
±200
Total Power Dissipation (TC = 25°C) PT1
84
Total Power Dissipation (TA = 25°C) PT2
1.5
Channel Temperature
Tch
150
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Tstg
IAR
EAR
−55 to +150
33
109
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
R07DS0130EJ0100 Rev.1.00
Sep 24, 2010
Page 1 of 6
Free Datasheet http://www.nDatasheet.com
1 page  
2SK4146
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
ID = 40 A
16
VGS = 10 V
Pulsed
12
8
4
0
-75 -25 25 75 125 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
tf
tr
10
1
0.1
1
td(off)
td(on)
VDD = 38 V
VGS = 10 V
RG = 0 Ω
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10 VGS = 10 V
0V
1
Pulsed
0.1
0.0 0.5 1.0 1.5
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
VGS = 0 V
f = 1 MHz
10
0.1
1
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
60 VDS
40
VDD = 60 V
38 V
15 V
12
V GS
8
20 4
ID = 80 A
00
0 10 20 30 40 50 60 70
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10 100
IF - Diode Forward Current - A
R07DS0130EJ0100 Rev.1.00
Sep 24, 2010
Page 5 of 6
Free Datasheet http://www.nDatasheet.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK4146.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK414 | N-Channel MOSFET Transistor |  Inchange Semiconductor |
| 2SK414 | (2SK413 / 2SK414) SILICON N-CHANNEL MOS FET |  ETC |
| 2SK4143 | SWITCHING N-CHANNEL POWER MOS FET |  NEC |
| 2SK4145 | SWITCHING N-CHANNEL POWER MOS FET | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |