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KEC - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Numéro de référence KF9N50P
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricant KEC 
Logo KEC 





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KF9N50P fiche technique
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 500V, ID= 9A
RDS(ON)=0.75 (Max) @VGS =10V
Qg(typ.) =19nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
SYMBOL
VDSS
VGSS
ID
RATING
KF9N50P KF9N50F
500
30
9 9*
5.5 5.5*
IDP 24
24*
EAS 200
EAR 4
dv/dt
4.5
125 44.6
PD
1.0 0.36
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.0
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.8
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
KF9N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF9N50P
DIM
KF9N50F
2010. 12. 20
Revision No : 0
1/2
Free Datasheet http://www.nDatasheet.com

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