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STA3250D fiches techniques PDF

KODENSHI KOREA - PNP Silicon Transistor

Numéro de référence STA3250D
Description PNP Silicon Transistor
Fabricant KODENSHI KOREA 
Logo KODENSHI KOREA 





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STA3250D fiche technique
Applications
Power amplifier application
High current switching application
Features
Low saturation voltage:
VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA
Large collector current capacity: IC=-2A
Small and compact SMD type package
“Green” device and RoHS compliant device
Available in full lead (Pb)-free device
STA3250D
PNP Silicon Transistor
PIN Connection
TO-252
Ordering Information
Type NO.
STA3250D
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
* : Single pulse, tp= 300
Marking
STA3250
: Year & Week Code
Symbol
Package Code
TO-252
Rating
[Ta=25]
Unit
VCBO
VCEO
VEBO
-50
-50
-5
V
V
V
IC
ICP*
PC(Ta= 25°C)
PC(TC= 25°C)
-2
-4
1
10
A(DC)
A(Pulse)
W
W
TJ 150
Tstg -55~150
°C
°C
KSD-T6O023-001
1
Free Datasheet http://www.nDatasheet.co

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