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PDF 2SB648 Data sheet ( Hoja de datos )

Número de pieza 2SB648
Descripción Silicon PNP Epitaxial
Fabricantes Hitachi 
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2SB648, 2SB648A
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD668/A
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC
Tj
Tstg
Ratings
2SB648
–180
–120
–5
–50
–100
1
150
–55 to +150
2SB648A
–180
–160
–5
–50
–100
1
150
–55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
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2SB648 pdf
2SB648, 2SB648A
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
5
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