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PDF K2487 Data sheet ( Hoja de datos )
| Número de pieza | K2487 | |
| Descripción | MOSFET ( Transistor ) - 2SK2487 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2487
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2487 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS (on) = 1.6 Ω (VGS = 10 V, ID = 4.0 A)
• Low Ciss Ciss = 2 100 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±8.0
A
Drain Current (pulse)*
ID (pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C) PT1 140 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 8.0 A
Single Avalanche Energy**
EAS 264 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4
4.7 MAX.
1.5
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. D10283EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995
Free Datasheet http://www.nDatasheet.com
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
VGS = 10 V
0 ID = 4 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
100
Coss
10
1.0
10 100
VDS - Drain to Source Voltage - V
Crss
1 000
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0 10
ID - Drain Current - A
100
2SK2487
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1
VGS = 0V
0.1 VGS = 10 V
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(off)
tr tf
td(on)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800 16
14
600 VDD = 450 V
300 V
150 V
400
12
VGS
10
8
6
200 4
VDS
0 20 40 60
Qg - Gate Charge - nC
2
0
80
5
Free Datasheet http://www.nDatasheet.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2487.PDF ] | |
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