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Numéro de référence | WFD830B | ||
Description | Silicon N-Channel MOSFET | ||
Fabricant | Winsemi | ||
Logo | |||
Free Datasheet http://www.nDatasheet.com
Features
� 5A,500V, RDS(on)(Max1.6Ω)@VGS=10V
� Ultra-low Gate charge(Typical 18nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFD830B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
5
2.9
20
±30
300
7.3
4.5
61
0.49
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 2.05
- 0.5 -
- - 62.5
Units
℃/W
℃/W
℃/W
Rev.A Feb.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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Pages | Pages 7 | ||
Télécharger | [ WFD830B ] |
No | Description détaillée | Fabricant |
WFD830 | Silicon N-Channel MOSFET | Winsemi |
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