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C4D30120D fiches techniques PDF

Cree - Silicon Carbide Schottky Diode

Numéro de référence C4D30120D
Description Silicon Carbide Schottky Diode
Fabricant Cree 
Logo Cree 





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C4D30120D fiche technique
C4D30120D–Silicon Carbide Schottky Diode
Z-RecRectifier
VRRM =
IF; TC<135˚C
Qc =
1200 V
= 43 A
192 nC
Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Swtitching
Package
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
TO-247-3
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Part Number
C4D30120D
Package
TO-247-3
Marking
C4D30120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
VR
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
1300
1200
V
V
IF
Continuous DC Current (Per Leg/Device) 21.5/43
A TC=135˚C, no AC component
IFRM Repetitive Peak Forward Surge Current
68*
44*
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienePuPluslese
IFSM Non-Repetitive Forward Surge Current
130*
117*
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienePuPluslese
Ptot Power Dissipation (Per Leg/Device)
220/440
95/190
W TTCC==2151˚0C˚C
Tc Maximum Case Temperature
135
˚C
TJ Operating Junction Range
Tstg Storage Temperature Range
-55 to
+175
-55 to
+135
˚C
˚C
TO-247 Mounting Torque
** Per Device, * Per Leg
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
Subject to change without notice.
www.cree.com/power
1
Free Datasheet http://www.nDatasheet.com

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