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C2M1000170D fiches techniques PDF

Cree - Silicon Carbide Power MOSFET

Numéro de référence C2M1000170D
Description Silicon Carbide Power MOSFET
Fabricant Cree 
Logo Cree 





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C2M1000170D fiche technique
VDS
1700 V
C2M1000170D
Silicon Carbide Power MOSFET
Z-FETTM MOSFET
ID @ 25˚C 4.9 A
RDS(on)
1.0
N-Channel Enhancement Mode
Features
Package
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
Higher System Efficiency
Increased System Switching Frequency
Reduced Cooling Requirements
Increased System Reliability
TO-247-3
Applications
Auxiliary Power Supplies
Switch Mode Power Supplies
Part Number
Package
C2M1000170D
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
IDS (DC) Continuous Drain Current
IDS (pulse) Pulsed Drain Current
VGS Gate Source Voltage
4.9 A VGS = 20 V, TC = 25 °C
3.0 VGS = 20 V, TC = 100 °C
5.0 A Pulse width tP limited by Tjmax
TC = 25 °C
-10/+25 V
Fig. 14
Fig. 16
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
69
-55 to
+150
260
1
8.8
W TC=25 °C, TJ = 150 °C
˚C
Fig. 13
˚C 1.6 mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 C2M1000170D Rev. A
Free Datasheet http://www.nDatasheet.com

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