|
|
Numéro de référence | C2M1000170D | ||
Description | Silicon Carbide Power MOSFET | ||
Fabricant | Cree | ||
Logo | |||
1 Page
VDS
1700 V
C2M1000170D
Silicon Carbide Power MOSFET
Z-FETTM MOSFET
ID @ 25˚C 4.9 A
RDS(on)
1.0 Ω
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
•
•
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
•
•
•
•
Higher System Efficiency
Increased System Switching Frequency
Reduced Cooling Requirements
Increased System Reliability
TO-247-3
Applications
•
•
Auxiliary Power Supplies
Switch Mode Power Supplies
Part Number
Package
C2M1000170D
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
IDS (DC) Continuous Drain Current
IDS (pulse) Pulsed Drain Current
VGS Gate Source Voltage
4.9 A VGS = 20 V, TC = 25 °C
3.0 VGS = 20 V, TC = 100 °C
5.0 A Pulse width tP limited by Tjmax
TC = 25 °C
-10/+25 V
Fig. 14
Fig. 16
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
69
-55 to
+150
260
1
8.8
W TC=25 °C, TJ = 150 °C
˚C
Fig. 13
˚C 1.6 mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 C2M1000170D Rev. A
Free Datasheet http://www.nDatasheet.com
|
|||
Pages | Pages 7 | ||
Télécharger | [ C2M1000170D ] |
No | Description détaillée | Fabricant |
C2M1000170D | Silicon Carbide Power MOSFET | Cree |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |