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PDF C2M0080120D Data sheet ( Hoja de datos )
| Número de pieza | C2M0080120D | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
| Logotipo |  |
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VDS
1200 V
C2M0080120D
Silicon Carbide Power MOSFET
Z-FETTM MOSFET
ID @ 25˚C 31.6 A
RDS(on)
80 mΩ
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
•
•
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
•
•
•
•
•
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
UPS
Part Number
C2M0080120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
IDS (DC) Continuous Drain Current
IDS (pulse) Pulsed Drain Current
VGS Gate Source Voltage
31.6
20
80
A VGS@20 V, TC = 25˚C
VGS@20 V, TC = 100˚C
A Pulse width tP = 50 μs
duty limited by Tjmax, TC = 25˚C
-10/+25 V
Fig. 16
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
208
-55 to
+150
260
1
8.8
W TC=25˚C
˚C
Fig. 15
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 C2M0080120D Rev. A
Free Datasheet http://www.nDatasheet.com
1 page  
Typical Performance
10000
1000
100
10
CISS
COSS
CRSS
Conditions:
VGS = 0 V
ftest = 1 MHz
10000
1000
100
10
CISS
COSS
CRSS
Conditions
VGS = 0 V
ftest = 1 MHz
1
0 50 100 150 200
Drain-Source Voltage, VDS (V)
Figure 13. Typical Typical Capacitances vs. Drain-Source
Voltage (0 - 200V)
1
0 200 400 600 800 1000
Drain-Source Voltage, VDS (V)
Figure 14. Typical Typical Capacitances vs. Drain-Source
Voltage (0 - 1000V)
250 35
Condition:
TJ = 150 °C
30
200
25
150 20
100 15
10
50
5
0
-50
-25
0 25 50 75 100
Case Temperature, TC (°C)
125
Figure 15. Power Dissipation Derating Curve
1.000
DC:
0.5
0.3
0.100
0.1
0.05
150
0
-50
-25
0 25 50 75 100 125 150
Case Temperatrue, TC (oC)
Figure 16. Continuous Current Derating Curve
100
Limited
by RDS(on)
10
0.010
0.02
0.01
tp D = tp / T
SinglePulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
Pulse Time, tp (s)
T
0.1
1
Figure 17. Typical Transient Thermal Impedance
(Junction - Case) with Duty Cycle
1
0.1
1
10 100
Drain-Source Voltage, VDS (V)
Figure 18. Safe Operating Area
1000
5 C2M0080120D Rev. A
Free Datasheet http://www.nDatasheet.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet C2M0080120D.PDF ] | |
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