PDF TDF8591TH Data sheet ( Hoja de datos )

Número de pieza	TDF8591TH
Descripción	class-D amplifier
Fabricantes	NXP Semiconductors
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No Preview Available ! TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D ampliﬁer Rev. 01 — 5 March 2008 Product data sheet 1. General description The TDF8591TH is a high-efﬁciency class-D audio power ampliﬁer with low power dissipation for application in car audio systems. The typical output power is 2 × 100 W into 4 Ω. The TDF8591TH is available in an HSOP24 power package with a small internal heat sink. Depending on the supply voltage and load conditions, a small or even no external heat sink is required. The ampliﬁer operates over a wide supply voltage range from ±14 V to ±29 V and consumes a low quiescent current. 2. Features I Zero dead time switching I Advanced output current protection I No DC offset induced pop noise at mode transitions I High efﬁciency I Supply voltage from ±14 V to ±29 V I Low quiescent current I Usable as a stereo Single-Ended (SE) ampliﬁer or as a mono ampliﬁer in Bridge-Tied Load (BTL) I Fixed gain of 26 dB in SE and 32 dB in BTL I High BTL output power: 310 W into 4 Ω I Suitable for speakers in the 2 Ω to 8 Ω range I High supply voltage ripple rejection I Internal oscillator or synchronized to an external clock I Full short-circuit proof outputs across load and to supply lines I Thermal foldback and thermal protection I AEC-Q100 qualiﬁed 3. Ordering information Table 1. Ordering information Type number Package Name Description TDF8591TH HSOP24 plastic, heatsink small outline package; 24 leads; low stand-off height Version SOT566-3 Free Datasheet http://www.nDatasheet.com 1 page NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D ampliﬁer The value of the RC time constant should be dimensioned for 500 ms. If the 100 µF capacitor is left out of the application the voltage on pin MODE will be applied with a much smaller time constant, which might result in audible pop noises during start-up (depending on DC output offset voltage and used loudspeaker). In order to fully charge the coupling capacitors at the inputs, the ampliﬁer will remain automatically in Mute mode for approximately 150 ms before switching to Operating mode. A complete overview of the start-up timing is given in Figure 4. VMODE 5V 2.5 V mute standby 0 V (SGND) 100 ms >50 ms audio switching operating time VMODE 5V audio switching operating standby 0 V (SGND) 100 ms Fig 4. Timing on mode selection input 50 ms time 001aad837 6.3 Pulse width modulation frequency The output signal of the ampliﬁer is a PWM signal with a switching frequency that is set by an external resistor Rext(OSC) connected between pins OSC and VSSA. An optimum setting for the carrier frequency is between 300 kHz and 350 kHz. An external resistor Rext(OSC) of 30 kΩ sets the frequency to 310 kHz. TDF8591TH_1 Product data sheet Rev. 01 — 5 March 2008 © NXP B.V. 2008. All rights reserved. 5 of 34 Free Datasheet http://www.nDatasheet.com 5 Page NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D ampliﬁer Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VMODE VOSC VIN1M VIN1P VIN2M VIN2P VDIAG VO voltage on pin MODE voltage on pin OSC voltage on pin IN1M voltage on pin IN1P voltage on pin IN2M voltage on pin IN2P voltage on pin DIAG output voltage referred to SGND2 referred to VSSD referred to SGND1 referred to SGND1 referred to SGND2 referred to SGND2 referred to VSSD Min 0 0 −5 −5 −5 −5 [3] 0 VSSP − 0.3 Max Unit 8V 40 V +5 V +5 V +5 V +5 V 9V VDDP + 0.3 V [1] Pin BOOT should not be loaded by any other means than the boot capacitor. A short-circuit between pin BOOT and VSS will damage the device. [2] Pin STABI should not be loaded by an external circuit. A short-circuit between pin STABI and a voltage source or VSS will damage the device. [3] Pin DIAG should not be connected to a voltage source or to a pull-up resistor. An example of a circuit that can be used to read out diagnostic data is given in Figure 7. 8. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) Rth(j-a) thermal resistance from junction to case thermal resistance from junction to ambient In free air 1 K/W 35 K/W 9. Static characteristics Table 7. Static characteristics VP = ±27 V; fosc = 310 kHz; Tamb = −40 °C to +85 °C; Tj = −40 °C to +150 °C; unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Supply VP Iq(tot) supply voltage total quiescent current no load, no ﬁlter, no snubber network connected [1] ±14 - ±27 50 ±29 65 Istb standby current Tj = −40 °C to +85 °C Mode select input; pin MODE (reference to SGND2) - 150 500 IMODE VMODE current on pin MODE voltage on pin MODE VMODE = 5.5 V Standby mode Mute mode - [2][3] 0 [2][3] 2.2 100 - - 300 0.8 2.8 Operating mode [2][3] 4.2 - 6 Diagnostic output; pin DIAG (reference to VSSD) VOL LOW-level output voltage activated OCP or WP [4] - - VOH HIGH-level output voltage no activated OCP or WP [4] - 8.4 Audio inputs; pins IN1M, IN1P (reference to SGND1), IN2P and IN2M (reference to SGND2) 0.8 9 VI input voltage [2] - 0 - Unit V mA µA µA V V V V V V TDF8591TH_1 Product data sheet Rev. 01 — 5 March 2008 © NXP B.V. 2008. All rights reserved. 11 of 34 Free Datash 11 Page

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