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TK7A50D Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba Semiconductor - Field Effect Transistor

شماره قطعه TK7A50D
شرح مفصل Field Effect Transistor
تولید کننده Toshiba Semiconductor 
آرم Toshiba Semiconductor 


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TK7A50D شرح
TK7A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK7A50D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
High forward transfer admittance: Yfs= 2.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
±30
7
28
35
129
7
3.5
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
3.57
62.5
Unit
°C/W
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.5 mH, RG = 25 Ω, IAR = 7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1 2010-06-03
Free Datasheet http://www.nDatasheet.com

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