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PDF STP5N62K3 Data sheet ( Hoja de datos )
| Número de pieza | STP5N62K3 | |
| Descripción | N-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB5N62K3, STD5N62K3, STF5N62K3
STP5N62K3, STU5N62K3
N-channel 620 V, 1.28 Ω, 4.2 A SuperMESH3™ Power MOSFET
D²PAK, DPAK,TO-220FP, TO-220 and IPAK
Features
Order codes VDSS
STB5N62K3
STD5N62K3
STF5N62K3
STP5N62K3
STU5N62K3
620 V
RDS(on)
max.
< 1.6 Ω
ID Pw
70 W
4.2 A 25 W
70 W
■ 100% avalanche tested
■ Extremely large avalanche performance
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
Switching applications
3
2
1
TO-220
3
1
DPAK
3
2
1
TO-220FP
3
1
D²PAK
IPAK
3
2
1
Figure 1. Internal schematic diagram
D(2)
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1. Device summary
Order codes
Marking
STB5N62K3
STD5N62K3
STF5N62K3
STP5N62K3
STU5N62K3
5N62K3
G(1)
Packages
D²PAK
DPAK
TO-220FP
TO-220
IPAK
S(3)
AM01476v1
Packaging
Tape and reel
Tape and reel
Tube
Tube
Tube
October 2010
Doc ID 17361 Rev 2
1/19
www.st.com
19
Free Datasheet http://www.nDatasheet.com
1 page  
STB/D/F/P/U5N62K3
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Electrical characteristics
Test conditions
VDD = 310 V, ID = 4.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min. Typ. Max Unit
12 ns
8 ns
--
40 ns
21 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.2 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.2 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.2 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
4.2 A
-
16.8 A
- 1.5 V
290
- 1900
13
ns
nC
A
320
- 2200
14
ns
nC
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
BVGSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 17361 Rev 2
5/19
Free Datasheet http://www.nDatasheet.com
5 Page 
STB/D/F/P/U5N62K3
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 25. TO-220FP drawing
L7
A
B
Dia
L6
H
Package mechanical data
mm
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
D
L5
F1 F2
F
G
G1
L2
L3
Doc ID 17361 Rev 2
L4
7012510_Rev_K
11/19
Free Datasheet http://www.nDatasheet.com
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet STP5N62K3.PDF ] | |
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