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PDF HM6N70F Data sheet ( Hoja de datos )
| Número de pieza | HM6N70F | |
| Descripción | silicon N-channel Enhanced VDMOSFETs | |
| Fabricantes | H&M Semiconductor | |
| Logotipo |  |
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HM6N70/F
General Description：
HM6N70/F,the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220, TO-220Fwhich
accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤2.2Ω)
l Low Gate Charge (Typical Data:18.6nC)
l Low Reverse transfer capacitances(Typical:6.6pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
700 V
6A
85 W
1.8 Ω
G DSTO-220 G DSTO-220)
Rating
700
6
3.6
24
±30
180
26
2.3
5.0
85
0.68
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
1
Free Datasheet http://www.datasheetlist.com/
1 page  
HM6N70/F
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
5
Free Datasheet http://www.datasheetlist.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HM6N70F.PDF ] | |
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