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IPP80N06S2-08 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPP80N06S2-08
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPP80N06S2-08 fiche technique
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N06S2-08
IPP80N06S2-08, IPI80N06S2-08
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
7.7 m
80 A
PG-TO220-3-1
PG-TO262-3-1
Type
IPB80N06S2-08
IPP80N06S2-08
IPI80N06S2-08
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Ordering Code Marking
SP0002-18830 2N0608
SP0002-18826 2N0608
SP0002-18828 2N0608
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D= 80 A
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
450
±20
215
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-13
Free Datasheet http://www.datasheet-pdf.com/

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