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PDF 2SC5950 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5950 | |
| Descripción | Silicon NPN Epitaxial Planar Type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5950
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2122
Features
High forward current transfer ratio hFE
Smini typ package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
VCBO
VCEO
Emitter-base voltage (Collector open)
VEBO
Collector current
IC
Peak collector current
ICP
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
Tstg
Rating
60
50
7
100
200
150
150
−55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
1: Base
2: Emitter
3: Collector
Marking Symbol: 7M
SMini3-G1 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = 10 µA, IE = 0
60
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
Emitter-base voltage (Collector open)
VEBO IE = 10 µA, IC = 0
7
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
100
Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
100
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
2.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
V
µA
µA
V
MHz
pF
Publication date: May 2005
SJC00333AED
1
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5950.PDF ] | |
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