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PDF K365 Data sheet ( Hoja de datos )
| Número de pieza | K365 | |
| Descripción | MOSFET ( Transistor ) - 2SK365 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
2SK365
Unit: mm
· High breakdown voltage: VGDS = −50 V
· High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
· Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA)
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
-50
10
200
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
V (BR) GDS
VGS = -30 V, VDS = 0
VDS = 0, IG = -100 mA
¾
-50
IDSS
(Note 1)
VDS = 10 V, VGS = 0
1.2
VGS (OFF)
ïYfsï
Ciss
VDS = 10 V, ID = 0.1 mA
-0.25
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 5.0
VDS = 10 V, VGS = 0, f = 1 MHz
¾
Crss
RDS (ON)
VDG = 10 V, ID = 0, f = 1 MHz
VDS = 10 mV, VGS = 0
(Note 2)
¾
¾
¾
¾
¾
¾
19
13
3
80
-1.0
¾
14
-1.5
¾
¾
¾
¾
nA
V
mA
V
mS
pF
pF
W
Note 1: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Note 2: Condition of the typical value IDSS = 5 mA
1 2003-03-26
1 page  
2SK365
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5 2003-03-26
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet K365.PDF ] | |
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