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PDF 45H11 Data sheet ( Hoja de datos )
| Número de pieza | 45H11 | |
| Descripción | MJD45H11 | |
| Fabricantes | ON Semiconductor | |
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MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VEB
IC
PD
PD
TJ, Tstg
Max
80
5
8
16
20
0.16
1.75
0.014
−55 to
+ 150
Unit
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
71.4 °C/W
Lead Temperature for Soldering
TL 260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
http://onsemi.com
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
MARKING
DIAGRAMS
12
3
4
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11
1
2
3
4
DPAK−3
CASE 369D
STYLE 1
Y = Year
WW = Work Week
x = 4 or 5
YWW
J4
xH11
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 6
1
Publication Order Number:
MJD44H11/D
Free Datasheet http://www.datasheet-pdf.com/
1 page  
MJD44H11 (NPN) MJD45H11 (PNP)
1000 1000
100
TJ = 25°C
VCE = 4 V
VCE = 1 V
100
TJ = 25°C
VCE = 4 V
1V
10
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJD44H11 DC Current Gain
10
10
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 5. MJD45H11 DC Current Gain
10
1000
TJ = 125°C
25°C
100
−40 °C
10
0.1
VCE = 1 V
1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. MJD44H11 Current Gain
versus Temperature
1000
TJ = 125°C
25°C
−40 °C
100
VCE = 1 V
10
10 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 7. MJD45H11 Current Gain
versus Temperature
10
1.2
1
0.8
0.6
0.4
0.2
0
0.1
VBE(sat)
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
Figure 8. MJD44H11 On−Voltages
1.2
1
0.8
0.6
0.4
0.2
0
10 0.1
VBE(sat)
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. MJD45H11 On−Voltages
10
http://onsemi.com
5
Free Datasheet http://www.datasheet-pdf.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 45H11.PDF ] | |
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