5N52U Datasheet PDF - STMicroelectronics
| Part Number | 5N52U | |
| Description | STD5N52U | |
| Manufacturers | STMicroelectronics | |
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STD5N52U,
STF5N52U
N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh™
Power MOSFETs in DPAK and TO-220FP packages
Datasheet - production data
Features
TAB
3
1
DPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2, TAB)
Order codes VDS RDS(on) max ID PTOT
STD5N52U
STF5N52U
525 V
1.5 Ω
70 W
4.4 A
25 W
• Outstanding dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitances
• Very low RDS(on)
• Extremely low trr
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
G(1) developed using UltraFASTmesh™ technology,
which combines the advantages of reduced on-
resistance, Zener gate protection and very high
dv/dt capability with an enhanced fast body-drain
recovery diode.
S(3)
AM01476v1
Order codes
STD5N52U
STF5N52U
Table 1. Device summary
Marking
Package
5N52U
DPAK
TO-220FP
Packaging
Tape and reel
Tube
April 2014
This is information on a product in full production.
DocID15684 Rev 3
1/19
www.st.com
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STD5N52U, STF5N52U
Electrical characteristics
Symbol
Table 6. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 260 V, ID = 2.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
- 11.4 - ns
- 13.6 - ns
- 23.1 - ns
- 15 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.4 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.4 A, di/dt = 100 A/μs
VDD= 60 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.4 A, di/dt = 100 A/μs
VDD= 60 V TJ = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
- 4.4 A
- 17.6 A
- 1.6 V
- 55
ns
- 95
nC
- 3.5
A
- 120
ns
- 266
nC
- 4.5
A
Symbol
Table 8. Gate-source Zener diode
Parameter
Test conditions
Min Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
30 - - V
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
DocID15684 Rev 3
5/19
19
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