|
|
PDF 10NM60N Data sheet ( Hoja de datos )
| Número de pieza | 10NM60N | |
| Descripción | STD10NM60N | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
1. 10NM60N transistor pinout  Hay una vista previa y un enlace de descarga de 10NM60N (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
|
No Preview Available !
STD10NM60N, STF10NM60N
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK
MDmesh™ II Power MOSFET
Features
Order codes
VDSS
@TJmax
STD10NM60N
RDS(on)
max.
STF10NM60N
STP10NM60N
650 V
< 0.55 Ω
STU10NM60N
ID
10 A
Pw
70 W
25 W
70 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are N-channel 600 V Power
MOSFET realized using the second generation of
MDmesh™ technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
IPAK
3
2
1
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
Marking
10NM60N
10NM60N
10NM60N
10NM60N
Package
DPAK
TO-220FP
TO-220
IPAK
!-V
Packaging
Tape and reel
Tube
Tube
Tube
November 2010
Doc ID 15764 Rev 5
1/17
www.st.com
17
Free Datasheet http://www.datasheet-pdf.com/
1 page  
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Min. Typ. Max Unit
10 ns
12 ns
--
32 ns
15 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
8A
-
32 A
- 1.3 V
250
- 2.12
17
ns
µC
A
315
- 2.6
16.5
ns
µC
A
Doc ID 15764 Rev 5
5/17
Free Datasheet http://www.datasheet-pdf.com/
5 Page 
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package mechanical data
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 22. TO-220FP drawing
L7
A
B
Dia
L6
mm
Typ.
16
D
L5
F1 F2
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
HG
G1
L2
L3
Doc ID 15764 Rev 5
L4
7012510_Rev_K
11/17
Free Datasheet http://www.datasheet-pdf.com/
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet 10NM60N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 10NM60N | Power MOSFET ( Transistor ) | STMicroelectronics |
| 10NM60N | STD10NM60N | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |