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2SC5015 fiches techniques PDF

CEL - NPN EPITAXIAL SILICON RF TRANSISTOR

Numéro de référence 2SC5015
Description NPN EPITAXIAL SILICON RF TRANSISTOR
Fabricant CEL 
Logo CEL 





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2SC5015 fiche technique
DATA SHEET
NPN SILICON RF TRANSISTOR
NE68518 / 2SC5015
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD (18)
FEATURES
High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Low noise and high gain
Low voltage operation
4-pin super minimold (18) package
ORDERING INFORMATION
Part Number
2SC5015
2SC5015-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
8 mm wide embossed taping
Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Ratings
9
6
2
30
150
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10403EJ01V0DS (1st edition)
(Previous No. P10394EJ2V0DS00)
Date Published June 2003 CP(K)
The mark shows major revised points.
Free Datasheet http://www.datasheet-pdf.com/

PagesPages 6
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