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STPS8H100FP Datasheet دیتاشیت PDF دانلود

دیتاشیت - ST Microelectronics - HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

شماره قطعه STPS8H100FP
شرح مفصل HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
تولید کننده ST Microelectronics 
آرم ST Microelectronics 


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STPS8H100FP شرح
® STPS8H100D/F/G/R/FP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
8A
100 V
175 °C
0.58 V
FEATURES AND BENEFITS
s NEGLIGIBLE SWITCHING LOSSES
s HIGH JUNCTION TEMPERATURE CAPABILITY
s LOW LEAKAGE CURRENT
s GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE
DROP
s INSULATED PACKAGE:
ISOWATT220AC, TO-220FPAC
Insulating voltage = 2000V DC
Capacitance = 12pF
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Schottky barrier rectifier designed for high fre-
quency compact Switched Mode Power Sup-
plies such as adaptators and on board DC/DC
converters.
ABSOLUTE RATINGS (limiting values)
A
K
TO-220AC
STPS8H100D
K
A
K
ISOWATT220AC
STPS8H100F
A
NC
D2PAK
STPS8H100G
A
K
NC
I2PAK
STPS8H100R
A
K
TO-220FPAC
STPS8H100FP
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current
δ = 0.5
TO-220AC /
I2PAK / D2PAK
ISOWATT220AC
TO-220FPAC
Tc= 165°C
Tc = 150°C
100
30
8
IFSM Surge non repetitive forward
current
tp = 10 ms sinusoidal
250
IRRM
IRSM
PARM
Tstg
Tj
Repetitive peak reverse current
tp = 2 µs F = 1kHz square
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature
1
3
10800
- 65 to + 175
175
dV/dt Critical rate of rise of rise voltage
10000
July 2003 - Ed: 6D
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
1/8
Free Datasheet http://www.Datasheet-PDF.com/

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