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Numéro de référence | 2SC5248 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | INCHANGE | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5248
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SA1964
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
160 V
VCEO Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
1.5 A
2
W
20
150 ℃
-55~150 ℃
isc Website:
Free Datasheet http://www.Datasheet-PDF.com/
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Pages | Pages 2 | ||
Télécharger | [ 2SC5248 ] |
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