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PDF HGTP2N120BN Data sheet ( Hoja de datos )
| Número de pieza | HGTP2N120BN | |
| Descripción | 12A/ 1200V/ NPT Series N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTP2N120BN, HGTD2N120BNS,
HGT1S2N120BNS
January 2000 File Number 4696.2
12A, 1200V, NPT Series N-Channel IGBT
The HGTP2N120BN, HGTD2N120BNS, and
HGT1S2N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49312.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120BN
TO-220AB
2N120BN
HGTD2N120BNS
TO-252AA
2N120BN
HGT1S2N120BNS
TO-263AB
2N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120BNS9A.
Symbol
C
G
E
Features
• 12A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Typical Performance Curves Unless Otherwise Specified (Continued)
450
RG = 51Ω, L = 5mH, VCE = 960V
400
350
300 VGE = 12V, VGE = 15V, TJ = 150oC
250
200
150
100
0
VGE = 12V, VGE = 15V, TJ = 25oC
1234
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
400
RG = 51Ω, L = 5mH, VCE = 960V
350
300
250
TJ = 150oC, VGE = 12V OR 15V
200
150
100
50
0
TJ = 25oC, VGE = 12V OR 15V
1234
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
5
30
DUTY CYCLE < 0.5%, VCE = 20V
250µs PULSE TEST
25
20
15
10 TC = 25oC
5 TC = 150oC
TC = -55oC
0 7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
20
IG(REF) = 1mA, RL = 260Ω, TC = 25oC
15
VCE = 1200V
10
VCE = 400V
VCE = 800V
5
0
0 5 10 15 20 25 30
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
35
0.8
FREQUENCY = 1MHz
0.6
CIES
0.4
0.2
COES
CRES
0
0
5
10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
3.0
DUTY CYCLE < 0.5%, TC = 110oC
250µs PULSE TEST
2.5
2.0
VGE = 15V
1.5
VGE = 10V
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5 Page | ||
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| PDF Descargar | [ Datasheet HGTP2N120BN.PDF ] | |
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