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PDF HGTP20N60C3 Data sheet ( Hoja de datos )
| Número de pieza | HGTP20N60C3 | |
| Descripción | 45A/ 600V/ UFS Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HGTG20N60C3, HGTP20N60C3,
HGT1S20N60C3S
December 2001
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49178.
Ordering Information
PART NUMBER
HGTG20N60C3
HGTP20N60C3
PACKAGE
TO-247
TO-220AB
BRAND
G20N60C3
G20N60C3
HGT1S20N60C3S
TO-263AB
G20N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.
Symbol
C
G
E
Features
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-220AB (ALTERNATE VERSION)
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
1 page  
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves Unless Otherwise Specified (Continued)
300
RG = 10Ω, L = 1mH, VCE = 480V
275
250
225 TJ = 150oC, VGE = 10V, VGE = 15V
200
TJ = 25oC, VGE = 10V, VGE = 15V
175
150
125
100
5
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 10Ω, L = 1mH, VCE = 480V
110
100
TJ = 150oC, VGE = 10V OR VGE = 15V
90
80
70
TJ = 25oC, VGE = 10V OR 15V
60
50
40
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
300
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
250
200 TC = -55oC
150
TC = 150oC
100
TC = 25oC
50
0
5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16
IG (REF) = 1mA, RL = 15Ω, TC = 25oC
14
12
10 VCE = 600V
8
6 VCE = 200V
VCE = 400V
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
5
CIES
4
FREQUENCY = 1MHz
3
2
COES
1
CRES
0
0 5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGTP20N60C3.PDF ] | |
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