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PDF HGTP1N120BN Data sheet ( Hoja de datos )
| Número de pieza | HGTP1N120BN | |
| Descripción | 5.3A/ 1200V/ NPT Series N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTD1N120BNS, HGTP1N120BN
January 2000 File Number 4649.2
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD1N120BNS
TO-252AA
1N120B
HGTP1N120BN
TO-220AB
1N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
Symbol
C
Features
• 5.3A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
G
E
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGTD1N120BNS, HGTP1N120BN
Typical Performance Curves (Unless Otherwise Specified) (Continued)
24
RG = 82Ω, L = 4mH, VCE = 960V
20
16 TJ VGE
25oC 13V
150oC 13V
12 25oC 15V
150oC 15V
8
0 1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
3
28
RG = 82Ω, L = 4mH, VCE = 960V
24
20 TJ = 25oC, TJ = 150oC, VGE = 13V
16
12
TJ = 25oC, TJ = 150oC, VGE = 15V
8
4
0.5 1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
3
84
RG = 82Ω, L = 4mH, VCE = 960V
80
TJ = 150oC, VGE = 15V
76
72 TJ = 150oC, VGE = 13V
68 TJ = 25oC, VGE = 15V
64
60 TJ = 25oC, VGE = 13V
56
0.5
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
360
RG = 82Ω, L = 4mH, VCE = 960V
320
280
240 TJ = 150oC, VGE = 13V OR 15V
200
160 TJ = 25oC, VGE = 13V OR 15V
120
0.5
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
3
18
DUTY CYCLE < 0.5%, VCE = 20V
16 PULSE DURATION = 250µs
14 TC = -55oC
12
10
8
6 TC = 150oC
4
TC = 25oC
2
0
7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
VCE = 800V
12
VCE = 400V
9
VCE = 1200V
6
3
IG(REF) = 1mA, RL = 600Ω, TC = 25oC
0
0 4 8 12 16 20
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
5
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