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PDF W24NM60N Data sheet ( Hoja de datos )
| Número de pieza | W24NM60N | |
| Descripción | STW24NM60N | |
| Fabricantes | STMicroelectronics | |
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STF24NM60N, STI24NM60N
STP24NM60N, STW24NM60N
N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET
TO-220FP, I2PAK, TO-220 and TO-247
Features
Order codes
STF24NM60N
STI24NM60N
STP24NM60N
STW24NM60N
VDSS
(@Tjmax)
650 V
650 V
650 V
650 V
RDS(on)
max.
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
ID
17 A
17 A
17 A
17 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-220FP
TAB
123
I2PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$ OR 4!"
'
3
Table 1. Device summary
Order codes
STF24NM60N
STI24NM60N
STP24NM60N
STW24NM60N
Marking
24NM60N
Package
TO-220FP
I2PAK
TO-220
TO-247
!-V
Packaging
Tube
August 2011
Doc ID 18047 Rev 3
1/19
www.st.com
19
Free Datasheet http://www.datasheet4u.net/
1 page  
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr(v)
td(off)
tf(i)
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min. Typ. Max Unit
11.5 ns
16.5 ns
--
73 ns
37 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 17 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
17 A
-
68 A
- 1.6 V
340
- 4.6
27
ns
µC
A
404
- 5.7
28
ns
µC
A
Doc ID 18047 Rev 3
5/19
Free Datasheet http://www.datasheet4u.net/
5 Page 
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
Package mechanical data
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 24. TO-220FP drawing
L7
A
B
Dia
L6
mm
Typ.
16
D
L5
F1 F2
H
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
G
G1
L2
L3
Doc ID 18047 Rev 3
L4
7012510_Rev_K
11/19
Free Datasheet http://www.datasheet4u.net/
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet W24NM60N.PDF ] | |
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