|
|
Numéro de référence | 13007N | ||
Description | ST13007N | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
ST13007N
® ST13007NFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s HIGH VOLTAGE CAPABILITY
s NPN TRANSISTOR
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
APPLICATIONS
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance
switching speeds.
3
2
1
TO-220
TO-220FP
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV
V CEO
V EBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collect or-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Tot al Dissipation at Tc ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
March 1999
Value
ST13007N
S T13 0 07NF P
700
400
9
8
16
4
8
80 33
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
oC
oC
1/7
Free Datasheet http://www.datasheet4u.net/
|
|||
Pages | Pages 7 | ||
Télécharger | [ 13007N ] |
No | Description détaillée | Fabricant |
13007 | NPN Epitaxial Silicon Transistor | Elite |
13007A | MJE13007A | Mospec Semiconductor |
13007B | TS13007B | TSC |
13007N | ST13007N | STMicroelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |