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PDF HGTP12N60B3 Data sheet ( Hoja de datos )
| Número de pieza | HGTP12N60B3 | |
| Descripción | 27A/ 600V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTP12N60B3, HGT1S12N60B3S
January 2000 File Number 4410.2
27A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60B3 and HGT1S12N60B3S are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49171.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60B3
TO-220AB
G12N60B3
HGT1S12N60B3S
TO-263AB
G12N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S12N60B3S9A.
Symbol
C
Features
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTP12N60B3, HGT1S12N60B3S
Typical Performance Curves Unless Otherwise Specified (Continued)
55
RG = 25Ω, L = 1mH, VCE = 480V
50
45
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
TJ = 25oC, TJ = 150oC, VGE = 15V
30
25
20
5
10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
150
RG = 25Ω, L = 1mH, VCE = 480V
125 TJ = 25oC, TJ = 150oC, VGE = 10V
100
75
50
25 TJ = 25oC and TJ = 150oC, VGE = 15V
0
5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER
CURRENT
300
RG = 25Ω, L = 1mH, VCE = 480V
275
250
225
TJ = 150oC, VGE = 10V, VGE = 15V
200 TJ = 25oC, VGE = 10V, VGE = 15V
175
150
125
100
5
10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 25Ω, L = 1mH, VCE = 480V
130
120
110
TJ = 150oC, VGE = 10V, VGE = 15V
100
90
80
70
60
5
TJ = 25oC, VGE = 10V OR 15V
10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
180
DUTY CYCLE <0.5%, VCE = 10V
160 PULSE DURATION = 250µs
TC = -55oC
TC = 25oC
140
120
100
80 TC = 150oC
60
40
20
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
5
15
Ig (REF) = 1mA, RL = 25Ω, TC = 25oC
12
VCE = 600V
9
6
VCE = 400V
VCE = 200V
3
0
0 5 10 15 20 25 30 35 40 45 50
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGTP12N60B3.PDF ] | |
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