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STN4NF20L
N-channel 200 V, 1.1 Ω, 1 A SOT-223
low gate charge STripFET™ II Power MOSFET
Features
Order code
STN4NF20L
VDSS
200 V
RDS(on)
max.
< 1.5 Ω
■ 100% avalanche tested
■ Low gate charge
■ Exceptional dv/dt capability
ID
1A
Application
Switching applications
Description
This N-channel 200 V realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high
efficiency isolated DC-DC converters.
2
3
2
1
SOT-223
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order code
STN4NF20L
Marking
4NF20L
3
!-V
Package
SOT-223
Packaging
Tape and reel
October 2010
Doc ID 17445 Rev 2
1/12
www.st.com
12
Free Datasheet http://www.datasheet4u.net/
STN4NF20L
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 1 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time ISD = 1 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V
Reverse recovery current (see Figure 14)
trr
Qrr
IRRM
Reverse recovery time ISD = 1 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V, Tj = 150 °C
Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
1A
-
4A
- 1.6 V
51
- 90
3.5
ns
nC
A
56
- 105
3.7
ns
nC
A
Doc ID 17445 Rev 2
5/12
Free Datasheet http://www.datasheet4u.net/
STN4NF20L
5 Revision history
Revision history
Table 9. Document revision history
Date
Revision
Changes
29-Apr-2010
1 First release.
11-Oct-2010
2 Document status promoted from preliminary data to datasheet.
Doc ID 17445 Rev 2
11/12
Free Datasheet http://www.datasheet4u.net/