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PDF HGTG5N120CND Data sheet ( Hoja de datos )
| Número de pieza | HGTG5N120CND | |
| Descripción | 25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTG5N120CND, HGTP5N120CND,
HGT1S5N120CNDS
January 2000 File Number 4598.2
25A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG5N120CND, HGTP5N120CND and
HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The IGBT
used is developmental type TA49309. The diode used in
anti-parallel is developmental type TA49058.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49307.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG5N120CND
TO-247
5N120CND
HGTP5N120CND
TO-220AB
5N120CND
HGT1S5N120CNDS TO-263AB
5N120CND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120CNDS9A.
Symbol
C
G
E
Features
• 25A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
2
TJ = 25oC, TJ = 150oC, VGE = 15V
3456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
0
2
TJ = 25oC, TJ = 150oC, VGE = 15V
3456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
10
600
RG = 25Ω, L = 5mH, VCE = 960V
500
400
TJ = 150oC, VGE = 12V, VGE = 15V
300
200
100
0
1
TJ = 25oC, VGE = 12V, VGE = 15V
23456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
900
RG = 25Ω, L = 5mH, VCE = 960V
800
700
600
500 TJ = 150oC, VGE = 12V AND 15V
400
300
TJ = 25oC, VGE = 12V AND 15V
200
100
1
23456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
100
DUTY CYCLE < 0.5%, VCE = 20V
90 250µs PULSE TEST
TC = 25oC
80
70 TC = -55oC
60
50 TC = 150oC
40
30
20
10
0
6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16
14
12
10
8
6
4
2
0
0
VCE = 1200V
VCE = 400V
VCE = 800V
IG(REF) = 1mA, RL = 120Ω, TC = 25oC
10 20 30 40 50
60
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
5
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