DataSheetWiki


IRFB5620PBF fiches techniques PDF

International Rectifier - Digital Audio MOSFET

Numéro de référence IRFB5620PBF
Description Digital Audio MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRFB5620PBF fiche technique
DIGITAL AUDIO MOSFET
PD - 96174
IRFB5620PbF
Features
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low RDSON for Improved Efficiency
Low QG and QSW for Better THD and Improved
Efficiency
Low QRR for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Can Deliver up to 300W per Channel into 8Load in
Half-Bridge Configuration Amplifier
Key Parameters
VDS
RDS(ON) typ. @ 10V
200
60
Qg typ.
25
Qsw typ.
9.8
RG(int) typ.
2.6
TJ max
175
DD
V
m:
nC
nC
°C
G
S
S
D
G
TO-220AB
GD S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
f Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
fJunction-to-Ambient
Notes  through … are on page 2
www.irf.com
Max.
200
±20
25
18
100
144
72
0.96
-55 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
1.045
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
1
09/05/08
Free Datasheet http://www.datasheet4u.net/

PagesPages 7
Télécharger [ IRFB5620PBF ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFB5620PBF Digital Audio MOSFET International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche