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PDF 80N03L Data sheet ( Hoja de datos )

Número de pieza 80N03L
Descripción SPB80N03L
Fabricantes Siemens 
Logotipo Siemens Logotipo



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No Preview Available ! 80N03L Hoja de datos, Descripción, Manual

SPP80N03L
SIPMOS® Power Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Logic Level
dv/dt rated
175°C operating temperature
VDS
RDS(on)
ID
30
0.006
80
V
A
Type
SPP80N03L
SPB80N03L
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4735-A2 Tube
P-TO263-3-2 Q67040-S4735-A3 Tape and Reel
Pin 1 Pin 2 Pin 3
GDS
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C, 1)
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 80 A, VDS = 24 V, di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Semiconductor Group
1
Value
80
80
320
700
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Free Datasheet http://www.datasheet4u.net/

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80N03L pdf
Power Dissipation
Ptot = f (TC)
SPP80N03L
320
W
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160 °C 190
TC
Safe operating area
ID = f (VDS)
parameter : D = 0 , TC = 25 °C
10 3 SPP80N03L
A tp = 54.0µs
100 µs
Drain current
ID = f (TC)
parameter: VGS 10 V
SPP80N03L
90
A
SPP80N03L
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 °C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP80N03L
K/W
10 0
10 -1
10 2
10
1
10
-1
10 0
Semiconductor Group
1 ms
10 ms
10 1 DC V
10 2
VDS
5
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Free Datasheet http://www.datasheet4u.net/

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