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PDF HGTG30N60A4D Data sheet ( Hoja de datos )
| Número de pieza | HGTG30N60A4D | |
| Descripción | 600V/ SMPS Series N-Channel IGBT with | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTG30N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60A4D
TO-247
30N60A4D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B
1 page  
HGTG30N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
220
RG = 3Ω, L = 200µH, VCE = 390V
200 VGE = 12V, VGE = 15V, TJ = 125oC
180
160
140
120
0
VGE = 12V, VGE = 15V, TJ = 25oC
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
70
RG = 3Ω, L = 200µH, VCE = 390V
60
TJ = 125oC, VGE = 12V OR 15V
50
40
TJ = 25oC, VGE = 12V OR 15V
30
20
0
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
60
350
DUTY CYCLE < 0.5%, VCE = 10V
300 PULSE DURATION = 250µs
250
TJ = 25oC
200
TJ = 125oC
150
TJ = -55oC
100
50
0
6 7 8 9 10 11
VGE, GATE TO EMITTER VOLTAGE (V)
12
FIGURE 13. TRANSFER CHARACTERISTIC
15.0
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
12.5
10.0
VCE = 600V
VCE = 400V
7.5
VCE = 200V
5.0
2.5
0
0 50 100 150 200
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
250
5
RG = 3Ω, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
4
ICE = 60A
3
2
ICE = 30A
1 ICE = 15A
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
20 TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
16
12
8
ICE = 60A
4
ICE = 30A
0
3 10
ICE = 15A
100
300
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B
5 Page | ||
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| PDF Descargar | [ Datasheet HGTG30N60A4D.PDF ] | |
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