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PDF HGTG20N120CN Data sheet ( Hoja de datos )
| Número de pieza | HGTG20N120CN | |
| Descripción | 63A/ 1200V/ NPT Series N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HGTG20N120CN
January 2000 File Number 4533.2
63A, 1200V, NPT Series N-Channel IGBT
The HGTG20N120CN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49289.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N120CN
TO-247
G20N120CN
NOTE: When ordering, use the entire part number
Symbol
C
Features
• 63A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
www.intersil.com
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGTG20N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
450
RG = 3Ω, L = 1mH, VCE = 960V
700
400
VGE = 12V, VGE = 15V, TJ = 150oC
350
600
500
RG = 3Ω, L = 1mH, VCE = 960V
300
VGE = 12V, VGE = 15V, TJ = 25oC
250
200
150
5
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
400 TJ = 150oC, VGE = 12V OR 15V
300
200
TJ = 25oC, VGE = 12V OR 15V
100
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
250
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
200
150
100 TC = 25oC
50
TC = 150oC
TC = -55oC
0
6 7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
6
FREQUENCY = 1MHz
5
CIES
4
3
2
CRES
1
COES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
20 IG(REF) = 2mA, RL = 30Ω, TC = 25oC
15
VCE = 1200V VCE = 800V
10
VCE = 400V
5
0
0 50 100 150
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
200
30
DUTY CYCLE < 0.5%, TC = 110oC
PULSE DURATION = 250µs
25
VGE = 15V OR 12V
20
15
VGE = 10V
10
5
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGTG20N120CN.PDF ] | |
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