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PDF HGTG12N60B3 Data sheet ( Hoja de datos )
| Número de pieza | HGTG12N60B3 | |
| Descripción | 27A/ 600V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTG12N60B3
August 2003
27A, 600V, UFS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49171.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG12N60B3
TO-247
G12N60B3
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2003 Fairchild Semiconductor Corporation
HGTG12N60B3 Rev. C1
1 page  
HGTG12N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
55
RG = 25Ω, L = 1mH, VCE = 480V
50
45
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
TJ = 25oC, TJ = 150oC, VGE = 15V
30
25
20
5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
RG = 25Ω, L = 1mH, VCE = 480V
275
250
225 TJ = 150oC, VGE = 10V, VGE = 15V
200
TJ = 25oC, VGE = 10V, VGE = 15V
175
150
125
100
5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
180
DUTY CYCLE <0.5%, VCE = 10V
160 PULSE DURATION = 250µs
TC = -55oC
TC = 25oC
140
120
100
80 TC = 150oC
60
40
20
0
4 5 6 7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
150
RG = 25Ω, L = 1mH, VCE = 480V
125 TJ = 25oC, TJ = 150oC, VGE = 10V
100
75
50
25
TJ = 25oC and TJ = 150oC, VGE = 15V
0
5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 25Ω, L = 1mH, VCE = 480V
130
120
110
TJ = 150oC, VGE = 10V, VGE = 15V
100
90
80 TJ = 25oC, VGE = 10V OR 15V
70
60
5 10
15 20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
15
Ig (REF) = 1mA, RL = 25Ω, TC = 25oC
30
12
VCE = 600V
9
6
VCE = 400V
VCE = 200V
3
0
0 5 10 15 20 25 30 35 40 45 50
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
©2003 Fairchild Semiconductor Corporation
HGTG12N60B3 Rev. C1
5 Page | ||
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| PDF Descargar | [ Datasheet HGTG12N60B3.PDF ] | |
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