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Intersil Corporation - 8A/ 500V P-Channel IGBTs

Numéro de référence HGTD8P50G1
Description 8A/ 500V P-Channel IGBTs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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HGTD8P50G1 fiche technique
HGTD8P50G1,
HGTD8P50G1S
March 1997
8A, 500V P-Channel IGBTs
Features
• 8A, 500V
• 3.7V VCE(SAT)
• Typical Fall Time - 1800ns
• High Input Impedance
• TJ = +150oC
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high voltage, low on-dissipation applications such
as switching regulators and motor drives. This P- channel IGBT
can be paired with N-Channel IGBTs to form a complementary
power switch and it is ideal for half bridge circuit configurations.
These types can be operated directly from low power integrated
circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD8P50G1
TO-251AA
G8P50G
HGTD8P50G1S
TO-252AA
G8P50G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
HGTD8P50G1S9A.
The development type number for these devices is TA49015.
Package
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
(FLANGE)
COLLECTOR
JEDEC TO-252AA
GATE
EMITTER
(FLANGE)
COLLECTOR
Symbol
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous
At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching SOA at TC = +25oC, VCL = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
No Snubber, Figure 17 - Circuit 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With 0.1µF Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125" from case for 5s)
NOTE:
1. TJ = 25oC, VCL = 350V, RGE = 25Ω, Figure 17 - Circuit 2 (C1 = 0.1µF)
HGTD8P50G1/G1S
-500
10
-12
-8
-18
±20
±30
-3
-18
66
0.53
-40 to +150
+260
UNITS
V
V
A
A
A
V
V
A
A
W
W/oC
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 3649.3

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