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PDF HGTD3N60C3S Data sheet ( Hoja de datos )
| Número de pieza | HGTD3N60C3S | |
| Descripción | 6A/ 600V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTD3N60C3S, HGTP3N60C3
January 2000 File Number 4139.5
6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60C3S
TO-252AA
G3N60C
HGTP3N60C3
TO-220AB
G3N60C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.,
HGTD3N60C3S9A.
Symbol
C
G
E
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
COLLECTOR
(FLANGE)
G
E
JEDEC TO-220AB
EC
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTD3N60C3S, HGTP3N60C3
Typical Performance Curves (Continued)
200 TJ = 150oC, TC = 75oC
RG = 82Ω, L = 1mH
100
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 3.75oC/W
10
1
2
3
VGE = 15V
VGE = 10V
4 56
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20 TJ = 150oC, VGE = 15V, RG = 82Ω, L = 1mH
18
16
14
12
10
8
6
4
2
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
500
FREQUENCY = 1MHz
400 CIES
300
200
100
0
0
COES
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
600 15
480 12
360 9
VCE = 600V
240
VCE = 400V
VCE = 200V
6
120
IG REF = 1.060mA,
3
RL = 200Ω, TC = 25oC
00
0 2 4 6 8 10 12 14
Qg, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HGTD3N60C3S.PDF ] | |
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