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PDF HGTD3N60C3 Data sheet ( Hoja de datos )
| Número de pieza | HGTD3N60C3 | |
| Descripción | 6A/ 600V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SEMICONDUCTOR
HGTD3N60C3,
HGTD3N60C3S
June 1997
6A, 600V, UFS Series N-Channel IGBTs
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60C3
TO-251AA
G3N60C
HGTD3N60C3S
TO-252AA
G3N60C
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state con-
duction loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25oC and
150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.
HGTD3N60C3S9A.
Symbol
N-CHANNEL ENHANCEMENT MODE
C
Packaging
JEDEC TO-251AA
EMITTER COLLECTOR
GATE
COLLECTOR
(FLANGE)
G
E
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1997
1
File Number 4139.3
1 page  
HGTD3N60C3, HGTD3N60C3S
Typical Performance Curves (Continued)
200 TJ = 150oC, TC = 75oC
RG = 82Ω, L = 1mH
100
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 3.75oC/W
10
1
2
3
VGE = 15V
VGE = 10V
4 56
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
20 TJ = 150oC, VGE = 15V, RG = 82Ω, L = 1mH
18
16
14
12
10
8
6
4
2
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
500
FREQUENCY = 1MHz
400 CIES
300
200
100
0
0
COES
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE
IG REF = 1.060mA, RL = 200Ω, TC = 25oC
600 15
480 12
360 9
VCE = 600V
240
VCE = 400V
VCE = 200V
6
120 3
00
0 2 4 6 8 10 12 14
Qg, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HGTD3N60C3.PDF ] | |
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