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PDF HGTD3N60B3S Data sheet ( Hoja de datos )
| Número de pieza | HGTD3N60B3S | |
| Descripción | 7A/ 600V/ UFS Series N-Channel IGBTs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Data Sheet
January 2000 File Number 4368.1
7A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET
and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49192.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60B3S
TO-252AA
G3N60B
HGT1S3N60B3S
TO-263AB
G3N60B3
HGTP3N60B3
TO-220AB
G3N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.
HGTD3N60B3S9A.
Symbol
C
G
E
Features
• 7A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
250
RG = 82Ω, L = 1mH, VCE = 480V
225
TJ = 150oC, VGE = 15V
200
175
TJ = 150oC, VGE = 10V
150
125 TJ = 25oC, VGE = 15V
100
TJ = 25oC, VGE = 10V
75
1234567
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 82Ω, L = 1mH, VCE = 480V
120
TJ = 150oC, VGE = 10V OR 15V
100
80
TJ = 25oC, VGE = 10V OR 15V
60
1234567
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
8
30
PULSE DURATION = 250µs
TC = 25oC
25
TC = -55oC
20
15 TC = 150oC
10
5
0
5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
Ig(REF) = 1mA, RL = 171Ω, TC = 25oC
12
9
6
VCE = 200V VCE = 400V
VCE = 600V
3
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
25
500
400
CIES
300
FREQUENCY = 1MHz
200
COES
100
0
0
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
5
5 Page | ||
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| PDF Descargar | [ Datasheet HGTD3N60B3S.PDF ] | |
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