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PDF HGTD1N120CNS Data sheet ( Hoja de datos )
| Número de pieza | HGTD1N120CNS | |
| Descripción | 6.2A/ 1200V/ NPT Series N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTD1N120CNS, HGTP1N120CN
January 2000 File Number 4652.2
6.2A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120CNS, and the HGTP1N120CN are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49317.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD1N120CNS
TO-252AA
1N120C
HGTP1N120CN
TO-220AB
1N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120CNS9A
Symbol
C
G
E
Features
• 6.2A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGTD1N120CNS, HGTP1N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
24
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 25oC, VGE = 13V
20
TJ = 150oC, VGE = 13V
16
TJ = 25oC, VGE = 15V
12
TJ = 150oC, VGE = 15V
8
0.5 1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
28
RG = 82Ω, L = 4mH, VCE = 960V
24
TJ = 25oC, TJ = 150oC, VGE = 13V
20
16
12 TJ = 25oC, TJ = 150oC, VGE = 15V
8
4
0.5 1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
3
84
RG = 82Ω, L = 4mH, VCE = 960V
80
76
72
68
64
60
56
0.5
TJ = 150oC, VGE = 15V
TJ = 150oC, VGE = 13V
TJ = 25oC, VGE = 15V
TJ = 25oC, VGE = 13V
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
560
520
480
440
400
360
320
280
240
0.5
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 13V OR 15V
TJ = 25oC, VGE = 13V OR 15V
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
DUTY CYCLE < 0.5%, VCE = 10V
14 PULSE DURATION = 250µs
12 TC = -55oC
10
8
6
4
2 TC = 150oC
TC = 25oC
0
6 9 12 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
5
15
VCE = 800V
12
VCE = 400V
9
VCE = 1200V
6
3
IG(REF) = 1mA, RL = 600Ω, TC = 25oC
0
0 4 8 12 16 20
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
5 Page | ||
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