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HGTD10N50F1S fiches techniques PDF

Intersil Corporation - 10A/ 400V and 500V N-Channel IGBTs

Numéro de référence HGTD10N50F1S
Description 10A/ 400V and 500V N-Channel IGBTs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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HGTD10N50F1S fiche technique
HGTD10N40F1, HGTD10N40F1S,
HGTD10N50F1, HGTD10N50F1S
March 1997
10A, 400V and 500V N-Channel IGBTs
Features
Packages
• 10A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL 1.4µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
HGTD10N40F1, HGTD10N50F1
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and
HGTD10N50F1S are n-channel enhancement-mode insu-
lated gate bipolar transistors (IGBTs) designed for high volt-
age, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated
directly from low power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD10N40F1
TO-251AA
G10N40
HGTD10N50F1
TO-251AA
G10N50
HGTD10N40F1S TO-252AA
G10N40
HGTD10N50F1S TO-252AA
G10N50
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A.
HGTD10N40F1S, HGTD10N50F1S
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
HGTD10N40F1
HGTD10N40F1S
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
400
400
±20
12
10
75
0.6
-55 to +150
HGTD10N50F1
HGTD10N50F1S
500
500
±20
12
10
75
0.6
-55 to +150
UNITS
V
V
V
A
A
W
W/oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-1
File Number 2425.4

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