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PDF HGT5A40N60A4D Data sheet ( Hoja de datos )
| Número de pieza | HGT5A40N60A4D | |
| Descripción | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HGT5A40N60A4D
February 2000 File Number 4783.1
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT5A40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49347. The diode
used in anti-parallel is the development type 49374.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT5A40N60A4D
TO-247-ST
40N60A4D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 100kHz Operation at 390V, 40A
• 200kHz Operation at 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o
• Low Conduction Loss
Packaging
JEDEC STYLE STRETCH TO-247
E
C
G
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
2-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGT5A40N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
42
RG = 2.2Ω, L = 200µH, VCE = 390V
40
TJ = 25oC, TJ = 125oC, VGE = 15V
38
36
34
32
30
28
26
24 TJ = 25oC, TJ = 125oC, VGE = 15V
22
0 10 20 30 40 50 60 70 80
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 2.2Ω, L = 200µH, VCE = 390V
100
TJ = 125oC, TJ = 25oC, VGE = 12V
80
60
40
20
0 TJ = 25oC, TJ = 125oC, VGE = 15V
0 10 20 30 40 50 60 70 80
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
190
RG = 2.2Ω, L = 200µH, VCE = 390V
180
170
VGE = 12V, VGE = 15V, TJ = 125oC
160
150
VGE = 12V OR 15V, TJ = 25oC
140
130
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
70
RG = 2.2Ω, L = 200µH, VCE = 390V
65
60 TJ = 125oC, VGE = 12V OR 15V
55
50
45
40 TJ = 25oC, VGE = 12V OR 15V
35
30 0 10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
400
DUTY CYCLE < 0.5%, VCE = 10V
350 PULSE DURATION = 250µs
300
250
200
TJ = -55oC
TJ = 125oC
150 TJ = 25oC
100
50
0
6 7 8 9 10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
11
16
IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
14
12
VCE = 600V
10
VCE = 400V
8
6 VCE = 200V
4
2
0
0 50 100 150 200 250 300 350 400
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
2-5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HGT5A40N60A4D.PDF ] | |
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