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PDF HGT1S2N120CNS Data sheet ( Hoja de datos )
| Número de pieza | HGT1S2N120CNS | |
| Descripción | 13A/ 1200V/ NPT Series N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTD2N120CNS, HGTP2N120CN,
HGT1S2N120CNS
January 2000 File Number 4680.2
13A, 1200V, NPT Series N-Channel IGBT
The HGTD2N120CNS, HGTP2N120CN, and
HGT1S2N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49313.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120CN
TO-220AB
2N120CN
HGTD2N120CNS
TO-252AA
2N120C
HGT1S2N120CNS
TO-263AB
2N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120CNS9A.
Symbol
C
G
E
Features
• 13A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
45
RG = 51Ω, L = 5mH, VCE = 960V
40
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
1.0
TJ = 25oC, TJ = 150oC, VGE = 15V
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
RG = 51Ω, L = 5mH, VCE = 960V
35
30 TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
TJ = 25oC, TJ = 150oC, VGE = 15V
5
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
5.0
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
RG = 51Ω, L = 5mH, VCE = 960V
350
VGE = 12V, VGE = 15V, TJ = 150oC
300
250
200
150
VGE = 12V, VGE = 15V, TJ = 25oC
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
5.0
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
700
RG = 51Ω, L = 5mH, VCE = 960V
600
500 TJ = 150oC, VGE = 12V OR 15V
400
300
200
100
1.0
TJ = 25oC, VGE = 12V OR 15V
1.5 2.0 2.5 3.0 3.5 4.0 4.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
5.0
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
DUTY CYCLE <0.5%, VCE = 20V
35 250µS PULSE TEST
30
25
20
15
TC = -55oC
10
5 TC = 25oC
0
789
TC = 150oC
10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
5
16
IG(REF) = 1mA, RL = 260Ω, TC = 25oC
14
VCE = 1200V
12
10
8
VCE = 400V VCE = 800V
6
4
2
0
0 5 10 15 20
QG, GATE CHARGE (nC)
25
FIGURE 14. GATE CHARGE WAVEFORMS
30
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGT1S2N120CNS.PDF ] | |
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