HGT1S20N35G3VLS Datasheet PDF - Intersil Corporation
| Part Number | HGT1S20N35G3VLS | |
| Description | 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs | |
| Manufacturers | Intersil Corporation | |
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April 1995
HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP20N35G3VL
T0-220AB
20N35GVL
HGT1S20N35G3VL
T0-262AA
20N35GVL
HGT1S20N35G3VLS
T0-263AB
20N35GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
The development type number for this device is TA49076.
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
MA
GATE
EMITTER
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
GATE
R1
R2
EMITTER
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25
At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . ISCIS
At L = 2.3mH, TC = +175oC . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS
Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if IGEM is limited to 10mA.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
3-66
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
375
24
20
20
±10
26
18
775
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
File Number 4006
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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
1600
1400
FREQUENCY = 1MHz
1200
1000
CIES
800
600
400 COES
200
CRES
0 5 10 15 20 25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC
12 6
10
VCE = 12V
8
5
4
6 VCE = 8V
VCE = 4V
4
3
2
21
00
0 10 20 30 40
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2 SINGLE PULSE
10-5
10-3
10-1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
101
Test Circuits
350
ICER = 10mA
345
TC = +25oC AND +175oC
340
335
0
2000
4000
6000
8000 10000
RGE, GATE-TO-EMITTER RESISTANCE (V)
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE - EMITTER RESISTANCE
2.3mH
RGEN = 25Ω
5V
RG
G
C
DUT
E
VDD
FIGURE 17. USE TEST CIRCUIT
RL
L = 550µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
G
C
DUT
10V
RGE = 50Ω
E
+
VCC
- 300V
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
3-70
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