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What is HGT1S1N120BNDS?

This electronic component, produced by the manufacturer "Intersil Corporation", performs the same function as "5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode".


HGT1S1N120BNDS Datasheet PDF - Intersil Corporation

Part Number HGT1S1N120BNDS
Description 5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Manufacturers Intersil Corporation　
Logo Intersil Corporation Logo　


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HGTP1N120BND, HGT1S1N120BNDS
Data Sheet
January 2000 File Number 4650.2
5.3A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP1N120BND and the HGT1S1N120BNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is development type number TA49316. The diode
used in anti-parallel with the IGBT is the RHRD4120
(TA49056).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49314.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP1N120BND
TO-220AB
1N120BND
HGT1S1N120BNDS TO-263AB
1N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A.
Symbol
C
G
E
Features
• 5.3A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,417,385
4,605,948
4,684,413
4,430,792
4,620,211
4,694,313
4,443,931
4,631,564
4,717,679
4,466,176
4,639,754
4,743,952
4,516,143
4,639,762
4,783,690
4,532,534
4,641,162
4,794,432
4,587,713
4,644,637
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.

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HGT1S1N120BNDS equivalent
HGTP1N120BND, HGT1S1N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
84 RG = 82Ω, L = 4mH, VCE = 960V
80
TJ = 150oC, VGE = 15V
76
72 TJ = 150oC, VGE = 13V
68 TJ = 25oC, VGE = 15V
64 TJ = 25oC, VGE = 13V
60
56
0.5
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
360
RG = 82Ω, L = 4mH, VCE = 960V
320
280
240 TJ = 150oC, VGE = 13V OR 15V
200
160 TJ = 25oC, VGE = 13V OR 15V
120
0.5
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
18
DUTY CYCLE < 0.5%, VCE = 20V
16 PULSE DURATION = 250µs
14
TC = -55oC
12
10
8
6
TC = 150oC
4
TC = 25oC
2
0
7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
350
300
CIES
250
FREQUENCY = 1MHz
200
150
100
COES
50
CRES
0
0
5
10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
15
VCE = 800V
12
VCE = 400V
9
VCE = 1200V
6
3
IG(REF) = 1mA, RL = 600Ω, TC = 25oC
0
0 4 8 12 16 20
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = 110oC
5
VGE = 15V
4
VGE = 12V
3
VGE = 10V
2
1
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE


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HGT1S1N120BNDSThe function is 5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode. Intersil CorporationIntersil Corporation

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