|
|
Numéro de référence | 13NM60N | ||
Description | STL13NM60N | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
STL13NM60N
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV
MDmesh™ II Power MOSFET
Features
Order code
STL13NM60N
VDSS @
TJmax
650 V
RDS(on)
max
< 0.385 Ω
ID
10 A (1)
1. The value is rated according to Rthj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
This device is a N-channel Power MOSFETs
made using the second generation of MDmesh™
technology. This revolutionary transistor
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
3
3
'
"OTTOM VIEW
$
0OWER&,!4X (6
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STL13NM60N
Marking
13NM60N
Package
PowerFLAT™ (8x8) HV
Packaging
Tape and reel
May 2011
Doc ID 018870 Rev 1
1/14
www.st.com
14
Free Datasheet http://www.datasheet4u.net/
|
|||
Pages | Pages 14 | ||
Télécharger | [ 13NM60N ] |
No | Description détaillée | Fabricant |
13NM60 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
13NM60N | STL13NM60N | STMicroelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |