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13NM60N fiches techniques PDF

STMicroelectronics - STL13NM60N

Numéro de référence 13NM60N
Description STL13NM60N
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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13NM60N fiche technique
STL13NM60N
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV
MDmesh™ II Power MOSFET
Features
Order code
STL13NM60N
VDSS @
TJmax
650 V
RDS(on)
max
< 0.385 Ω
ID
10 A (1)
1. The value is rated according to Rthj-case
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This device is a N-channel Power MOSFETs
made using the second generation of MDmesh™
technology. This revolutionary transistor
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
3
3
'
"OTTOMVIEW
$
0OWER&,!4˜X (6
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STL13NM60N
Marking
13NM60N
Package
PowerFLAT™ (8x8) HV
Packaging
Tape and reel
May 2011
Doc ID 018870 Rev 1
1/14
www.st.com
14
Free Datasheet http://www.datasheet4u.net/

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